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A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film TransistorsWU, Wei-Jing; YAO, Ruo-He.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1128-1131, issn 0741-3106, 4 p.Article

A Physics-Based Approximation for the Polysilicon Thin-Film Transistor Surface PotentialWANLING DENG; JUNKAI HUANG.IEEE electron device letters. 2011, Vol 32, Num 5, pp 647-649, issn 0741-3106, 3 p.Article

A new polysilicon CMOS self-aligned double-gate TFT technologyZHIBIN XIONG; HAITAO LIU; CHUNXIANG ZHU et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2629-2633, issn 0018-9383, 5 p.Article

A physical model of floating body effects in polysilicon thin film transistorsWU, W. J; YAO, R. H; CHEN, T et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 930-936, issn 0038-1101, 7 p.Article

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional SolutionWU, Wei-Jing; YAO, Ruo-He; YAO, Ri-Hui et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 3230-3235, issn 0018-9383, 6 p.Article

Device degradation behavior and polysilicon film morphology of thin film transistors fabricated using advanced excimer laser lateral solidification techniquesKOUVATSOS, D. N; VOUTSAS, A. T; MICHALAS, L et al.Thin solid films. 2007, Vol 515, Num 19, pp 7413-7416, issn 0040-6090, 4 p.Conference Paper

A new analytical threshold voltage model for the doped polysilicon thin-film transistorsWEIJING WU; RUOHE YAO; XUEREN ZHENG et al.Solid-state electronics. 2009, Vol 53, Num 6, pp 607-612, issn 0038-1101, 6 p.Article

Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approachWANLING DENG; JUNKAI HUANG.Solid-state electronics. 2013, Vol 87, pp 69-73, issn 0038-1101, 5 p.Article

A new analog buffer using low-temperature polysilicon thin-film transistors for active-matrix displaysPAPPAS, Ilias; SISKOS, Stilianos; DIMITRIADIS, Charalambos A et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 2, pp 219-224, issn 0018-9383, 6 p.Article

A compact model for polysilicon TFTs leakage current including the poole-frenkel effectWU, W. J; YAO, R. H; LI, S. H et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 2975-2983, issn 0018-9383, 9 p.Article

Numerical simulation of low-frequency noise in polysilicon thin-film transistorsPICHON, L; BOUKHENOUFA, A; CORDIER, C et al.IEEE electron device letters. 2007, Vol 28, Num 8, pp 716-718, issn 0741-3106, 3 p.Article

Hollow-Cathode CVD N₂ Plasma Treatment for Performance and Reliability Improvement of LTPS-TFTsFAN, Ching-Lin; LIN, Yi-Yan; WANG, Shou-Kuan et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 387-389, issn 0741-3106, 3 p.Article

A Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film TransistorsJUNKAI HUANG; WANLING DENG; XUEREN ZHENG et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2607-2615, issn 0018-9383, 9 p.Article

LTPS-TFT Pixel Circuit to Compensate for OLED Luminance Degradation in Three-Dimensional AMOLED DisplayLIN, Chih-Lung; CHANG, Wen-Yen; HUNG, Chia-Che et al.IEEE electron device letters. 2012, Vol 33, Num 5, pp 700-702, issn 0741-3106, 3 p.Article